Progressive development of superjunction power MOSFET devices

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 211-219

  Chen, Yu ^a   Liang, Yung C ^a   Samudra, Ganesh S ^a   Yang, Xin ^b   Buddharaju, Kavitha D ^c   Feng, Hanhua ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Power integrated circuits; Power MOSFET; Silicon unipolar limit; Superjuction (SJ)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; POLYSILICON; POWER INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; VOLTAGE MEASUREMENT;

P-N COLUMNS; SILICON UNIPOLAR LIMIT; SUPERJUNCTION POWER MOSFET DEVICES;

MOSFET DEVICES;

EID: 37749046411     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911344     Document Type: Article

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