Low voltage super junction MOSFET simulation and experimentation

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 37-40

  Henson, Timothy ^a   Cao, Joe ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; POLYSILICON; SEMICONDUCTOR DOPING;

HIGH ENERGY IMPLANTS;

MOSFET DEVICES;

EID: 0041939730     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. X. Chen, U. S. Patent 5216275, 1993.
2. P. M. Shenoy, A. Bhalla, and G. M. Dolny, "Analysis of the Effect of Charge Imbalance on the Static and Dynamic Characteristics of the Super Junction MOSFET", Proc. Of the ISPSD, pp.99-102, May, 1999.
3. J. Tihanyi, U. S. Patent 5438215, 1995.