Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7227-7231

  Lin, Ming Jang ^a   Lee, Tsung Hwang ^a   Chang, Fang Long ^a   Liaw, Chorng Wei ^b   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Breakdown voltage; LDMOSFET; Power device; RESURF; SJ RESURF; Specific on resistance; Superjunction

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; MICROPROCESSOR CHIPS; OPTIMIZATION; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

POWER DEVICES; RESURF; SPECIFIC ON-RESISTANCE; SUPERJUNCTIONS;

MOSFET DEVICES;

EID: 1242310372     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7227     Document Type: Article

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