A 20mΩcm2 600 V-class super junction MOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 459-462

  Saito, Wataru ^a   Omura, Ichiro ^a   Aida, Satoshi ^a   Koduki, Shigeo ^a   Izumisawa, Masaru ^a   Yoshioka, Hironori ^a   Ogura, Tsuneo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; OPTIMIZATION; SILICON; SWITCHING; WAVEFORM ANALYSIS;

AVALANCHE CURRENTS; DOPING CONCENTRATION; SUPERJUNCTIONS;

MOSFET DEVICES;

EID: 4944221738     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. G. Deboy, M. März, J. -P. Stengl, H. Strack, J. Tihanyi and H. Weber; "A new generation of high voltage MOSFETs breaks the limit line of silicon," in IEDM Tech. Dig., 1998, pp.683-685.
2. M. Saggio, D. Fagone and S. Musumeci; "MDmesh™: innovative technology for high voltage powerMOSFETs," in Proc. of ISPSD2000, 2000, pp.65-68.
3. 2 680V silicon superjunction MOSFET," in Proc. of ISPSD'02, pp.241-244, 2002.
4. X. -B. Chen and J. K. O. Shin; "Optimization of the specific on-resistance of the COOLMOS™," IEEE Trans. Electron Devices, vol. ED-48, pp.344-348, 2001.
5. P. M. Shenoy, A. Bhalla and G. M. Dolny; "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET," in Proc. of ISPSD'99, pp.99-102, 1999.
6. B. Zhang, Z. Xu and A. Q. Huang; "Analysis of the forward biased safe operating area of the super junction MOSFET," in Proc. of ISPSD2000, pp.61-64, 2000.
7. F. Saint-Eve, S. Lefebvre and Z. Khatir; "Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions," in Proc. of ISPSD '03, pp.312-315, 2003.
8. ISE TCAD Manuals, (ISE Integrated Systems Engineering AG, Zurich, 1999) vol. 5, release 6.