170 V super junction - LDMOST in a 0.5 μm Commercial CMOS/SOS technology

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 228-231

  Nassif Khalil, S G ^a   Salama, C Andre T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; SEMICONDUCTOR JUNCTIONS;

CHARGE COMPENSATION;

MOS DEVICES;

EID: 0041513434     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S.G. Nassif-Khalil and C.A.T. Salama, "Super Junction LDMOST in Silicon-On-Sapphire Technology (SJ-LDMOS)", International Symposium on Power Semiconductor Devices and ICs (ISPSD), Proceedings, pp. 81-84, 2002.
2. E. Arnold, S. Merchant, M. Amano, S. Mukherjee, H. Pein and A. Lukikhuize, "Comparison of Junction-Isolated and SOI High-Voltage Devices Operating in the Source Follower Mode" International Symposium on Power Semiconductor Devices & ICs (ISPSD), Proceedings, pp. 242-243, 1992.
3. S. Matsumoto, I.J. Kim, T. Sakai, T. Fukumitsu and T. Yachi, " Device Characteristics of a 30-V-Class Thin-Film SOI Power MOS-FET", IEEE Transactions on Electron Devices, Vol. 43, pp. 746-752, 1996.
4. L. Lorenz, G. Deboy, A. Knapp and A. Marz, "COOLMOS™ - A New Milestone in High Voltage Power MOS", International Symposium on Power Semiconductor Devices and ICs (ISPSD), Proceedings, pp. 3-10, 1999.
5. S.G. Nassif-Khalil and C.A.T. Salama, "Super Junction LDMOST on Silicon-On-Sapphire Substrate," IEEE Transactions on Electron Devices, accepted for publication.