Design of gradient oxide-bypassed superjunction power MOSFET devices

IEEE Transactions on Power Electronics

Volumn 22, Issue 4, 2007, Pages 1303-1310

  Chen, Yu ^a   Liang, Yung C ^a   Samudra, Ganesh S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Breakdown voltage; Gradient oxide bypassed (GOB); Ideal unipolar silicon limit; Oxide bypassed (OB); Power MOSFETs; Specific on state resistance; Superjunction

Indexed keywords

BLOCKING CAPABILITY; GRADIENT OXIDE-BYPASSED STRUCTURE; ON-STATE RESISTANCE; SUPERJUNCTION;

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

MOSFET DEVICES;

EID: 34547111057     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.900559     Document Type: Article

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