Slanted oxide-bypassed superjunction power MOSFETs

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2006, Pages 2746-2750

  Chen, Yu ^a,b   Liang, Yung C ^a,b   Samudra, Ganesh S ^a,b  

^a IEEE

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNS (STRUCTURAL); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTRONICS INDUSTRY; HETEROJUNCTION BIPOLAR TRANSISTORS; INDUSTRIAL ELECTRONICS; IONIZATION OF GASES; OPTICAL DESIGN;

ANNUAL CONFERENCE; BLOCKING CAPABILITY; BREAK DOWN VOLTAGES; DRIFT REGIONS; FABRICATION PROCESSES; HIGH BREAKDOWN VOLTAGE; LOW SPECIFIC ON-STATE RESISTANCE; MEDIUM-VOLTAGE; NON-UNIFORM ELECTRIC FIELDS; ON-STATE RESISTANCE; OXIDE BYPASSED; OXIDE THICKNESSES; POWER MOSFET DEVICES; POWER-MOSFETS; PROCESS TECHNOLOGIES; SUPER JUNCTIONS; SUPERJUNCTION DEVICES;

MOSFET DEVICES;

EID: 37749025627     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2006.347490     Document Type: Conference Paper

References (15)

1. X.B. Chen, "Semiconductor Power Devices with Alternating Conductivity Type High-Voltage Breakdown Regions", US Patent 5216275, June 1993.
2. L. Lorenz, G. Deboy, A. Knapp and M. März, "COOLMOS™ - a new milestone in high voltage Power MOS", Proceedings of International Symposium on Power Semiconductor Devices and ICs, pp. 3-10, 1999.
3. Y. Chen, Y.C. Liang and G.S. Samudra, 'Theoretical Analyses of Oxide-Bypassed Superjunction Power Metal Oxide Semiconductor Field Effect Transistor Devices", Japanese Journal of Applied Physics, Vol. 44, No. 2, pp. 847-856, 2005.
4. P.M. Shenoy, A. Bhalla and G.M. Dolny, "Analysis of the Effect of Charge Imbalance on the Static and Dynamic Characteristics of the Super Junction MOSFET", Proceedings of International Symposium on Power Semiconductor Devices and ICs, pp. 99-102, 1999.
5. K.P. Gan, X. Yang, Y.C. Liang, G.S. Samudra and Y. Liu, "A Simple Technology for Superjunction Device Fabrication: Polyflanked VDMOSFET", IEEE Electron Device Letters, Vol. 23, No. 10, pp. 627-629, October 2002.
6. H.M. Zhong, Y.C. Liang, G.S. Samudra, X. Yang, "Practical Superjunction Device Performance under Given Thermal Cycles", Semiconductor Science and Technology, Vol. 19, pp.987-996, 2004.
7. Y.C. Liang, K.P. Gan and G.S. Samudra, "Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices", IEEE Electron Device Letters, Vol. 22, No. 8, pp. 407-409, 2001.
8. X. Yang, "Oxide-bypassed Power MOSFET Devices", Chapter 2-3. M. Eng. thesis, National University of Singapore, 2003.
9. X. Yang, Y.C. Liang, G.S. Samudra and Y. Liu, "Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width", IEEE Electron Device Letters, Vol. 24, No.11, pp. 704 - 706, Nov. 2003.
10. B. J. Baliga, "Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance," U.S. Patent, 5 637 898, June 10, 1997.
11. B.J. Baliga, "Methods of Forming Power Semiconductor Devices Having Tapered Trench-based Insulating Regions Therein", US Patent No. 6,365,462 B2, 2002
12. Y. Chen, Y.C. Liang and G.S. Samudra, "Design of Superjunction Power MOSFET Devices using the Gradient Oxide-Bypassed Structure", Proceedings of The Sixth International Conference on Power Electronics and Drive Systems, pp. 676-680, Dec 2005
13. B.J. Baliga, Power Semiconductor Devices, Chapter 3, Boston: PWS Publishing Company, 1995.
14. Medici 4.1 User's Manual, Avant! Corporation, Fremont, CA, July 1998.
15. C.Hu: Rec. A Parametric Study of Power MOSFETS, Power Electronics Specialists conference, pp.385-395, 1979.