Manufacturing of high aspect-ratio p-n junctions using vapor phase doping for application in multi-Resurf devices

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 237-240

  Rochefort, Christelle ^a   Van Dalen, R ^a   Duhayon, N ^a   Vandervorst, W ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; ETCHING; MICROSCOPIC EXAMINATION; MOSFET DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPY (SCM); VAPOR PHASE DOPINGS (VPD);

SEMICONDUCTOR JUNCTIONS;

EID: 0036045603     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A new generation of high voltage MOSFETs breaks the limit line of silicon
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4. Ultra-thin-base Si bipolar transistor using Rapid Vapor-phase direct Doping (RVD)
5. Shallow p-type layers in Si by Rapid Vapor-Phase Doping for high speed bipolar and MOS applications
6. Rapid Vapor-Phase Direct Doping; Ultra-shallow junction formation method for high-speed bipolar and highly-integrated DRAM LSIs
7. Scanning capacitance microscopy
8. A parametric study of power MOSFETs
9. Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
10. Breaking the Silicon limit using semi-insulating Resurf layers