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Volumn 19, Issue 8, 2004, Pages 987-996

Practical superjuction MOSFET device performance under given process thermal cycles

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; OXIDES; SILICON WAFERS; THERMAL CYCLING;

EID: 4043096847     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/8/007     Document Type: Article
Times cited : (26)

References (26)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.