Numerical study of partial-SOI LDMOSFET power devices

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 114-117

  Park, J M ^a   Grasser, T ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MOS DEVICES; SEMICONDUCTOR DEVICES; SILICON;

PARTIAL SOI; POWER DEVICES; SILICON WINDOWS; SOI LDMOSFET;

POWER SEMICONDUCTOR DEVICES;

EID: 84961786713     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984452     Document Type: Conference Paper

References (7)

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