Single event effects in 1Gbit 90nm NAND flash memories under operating conditions

Proceedings - IOLTS 2007 13th IEEE International On-Line Testing Symposium

Volumn , Issue , 2007, Pages 146-151

  Bagatin, M ^a   Cellere, G ^a   Gerardin, S ^a   Paccagnella, A ^a   Visconti, A ^b   Beltrami, S ^b   Maccarrone, M ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; FLASH MEMORY;

CONSTANT FLUX; DIFFERENT TYPES; FLOATING GATE (FG); INTERNATIONAL (CO); NAND FLASH MEMORIES; ON LINE TESTING; OPERATING CONDITIONS; SINGLE EVENT EFFECTS (SEE); SPACE ENVIRONMENTS;

ERROR ANALYSIS;

EID: 37249015020     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IOLTS.2007.59     Document Type: Conference Paper

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