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Volumn , Issue , 2004, Pages 47-53

SEE sensitivities of selected advanced flash and first-in-first-out memories

Author keywords

First in first out memory; Flash memory; Single event effects

Indexed keywords

COMMERCIAL-OFF-THE-SHELF (COTS); FIRST-IN-FIRST-OUT MEMORY; METAL OXIDE SEMICONDUCTORS; SINGLE EVENT EFFECT (SEE);

EID: 17644369234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (26)

References (16)
  • 1
    • 17644391482 scopus 로고    scopus 로고
    • Single event effect test results for candidate spacecraft electronics
    • K.A. LaBel, et al., "Single Event Effect Test Results for Candidate Spacecraft Electronics," 1997 NSREC Workshop Record, 14, 1997.
    • (1997) 1997 NSREC Workshop Record , vol.14
    • LaBel, K.A.1
  • 2
    • 17644363794 scopus 로고    scopus 로고
    • Single event and radiation damage results for candidate spacecraft electronics
    • M.V. O'Bryan, et al., "Single Event and Radiation Damage Results for Candidate Spacecraft Electronics," 1998 NSREC Workshop Record, 39, 1998.
    • (1998) 1998 NSREC Workshop Record , vol.39
    • O'Bryan, M.V.1
  • 3
    • 17644362040 scopus 로고    scopus 로고
    • Recent radiation damage and single event effect results for microelectronics
    • M.V. O'Bryan, et al., "Recent Radiation Damage and Single Event Effect Results for Microelectronics," 1999 NSREC Workshop Record, 1, 1999.
    • (1999) 1999 NSREC Workshop Record , vol.1
    • O'Bryan, M.V.1
  • 4
    • 0031357739 scopus 로고    scopus 로고
    • Single-event upset in flash memories
    • H.R. Schwarts, et al., "Single-Event Upset in Flash memories," IEEE Trans. Nuc. Sci., 44, 2315-2324, 1997.
    • (1997) IEEE Trans. Nuc. Sci. , vol.44 , pp. 2315-2324
    • Schwarts, H.R.1
  • 6
    • 84952789772 scopus 로고    scopus 로고
    • TID, SEE and radiation induced failures in advanced flash memories
    • D.N. Nguyen and L.Z. Scheick, "TID, SEE and radiation induced failures in advanced flash memories," IEEE NSREC Workshop Record, 18-23, 2003.
    • (2003) IEEE NSREC Workshop Record , pp. 18-23
    • Nguyen, D.N.1    Scheick, L.Z.2
  • 7
    • 17644408486 scopus 로고    scopus 로고
    • 29228802.pfd, September
    • Intel Application Note 740, 29228802.pfd, September 2001.
    • (2001) Intel Application Note , vol.740
  • 8
    • 0025416877 scopus 로고
    • Experimental transient analysis of the tunnel current in EEPROM cells
    • R. Bez, D. Cantarelli, and P. Cappelletti, "Experimental Transient Analysis of the Tunnel Current in EEPROM Cells," IEEE Trans. Electron Devices, 37, 1081-1086, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1081-1086
    • Bez, R.1    Cantarelli, D.2    Cappelletti, P.3
  • 9
    • 0027591870 scopus 로고
    • Advanced electrical-level modeling of EEPROM cells
    • M. Lanzoni, et al., "Advanced Electrical-Level Modeling of EEPROM Cells," IEEE Trans. Electron Devices, 40, 951-957, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 951-957
    • Lanzoni, M.1
  • 10
    • 0031623637 scopus 로고    scopus 로고
    • Single event functional interrupt (SEFI) sensitivity in microcircuits
    • R. Koga, et al, "Single event functional interrupt (SEFI) sensitivity in microcircuits," Proceedings of RADECS, 311-318, 1997.
    • (1997) Proceedings of RADECS , pp. 311-318
    • Koga, R.1
  • 11
    • 33749382730 scopus 로고
    • The relationship of proton and heavy ion upset thresholds
    • E.L. Petersen, "The Relationship of Proton and Heavy Ion Upset Thresholds," IEEE Trans. Nucl. Sci., 39, 1600-1604, 1992.
    • (1992) IEEE Trans. Nucl. Sci. , vol.39 , pp. 1600-1604
    • Petersen, E.L.1
  • 12
    • 11044223174 scopus 로고    scopus 로고
    • Correlation between proton and heavy-ion SEUs in commercial memory devices
    • K. Chiba, et al., "Correlation between Proton and Heavy-ion SEUs in Commercial Memory Devices," IEEE NSREC Workshop Record, 127-132, 2003.
    • (2003) IEEE NSREC Workshop Record , pp. 127-132
    • Chiba, K.1
  • 14
    • 0028712009 scopus 로고
    • Ion-induced sustained high current condition in a bipolar device
    • December
    • R. Koga, et al., "Ion-induced sustained high current condition in a bipolar device," IEEE Trans Nucl Sci, Vol. 41, pp2172-2179, December 1994.
    • (1994) IEEE Trans Nucl Sci , vol.41 , pp. 2172-2179
    • Koga, R.1
  • 16
    • 11044222874 scopus 로고    scopus 로고
    • A model for TID effects on floating gate memory cells
    • December
    • G. Cellere, et al., "A model for TID effects on floating gate memory cells," IEEE Trans Nucl Sci, Vol. 51, December 2004.
    • (2004) IEEE Trans Nucl Sci , vol.51
    • Cellere, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.