Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2257-2263

  Griffoni, Alessio ^a,b   Gerardin, Simone ^a,b,c   Cester, Andrea ^a,b,c   Paccagnella, Alessandro ^a,b,c   Simoen, Eddy ^d   Claeys, Cor ^d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d IMEC   (Belgium)

Author keywords

CMOS devices and integrated circuits reliability; Heavy ions; SOI; Strain

Indexed keywords

ELECTRICAL STRESS; ULTRA-THIN GATE OXIDE;

CMOS INTEGRATED CIRCUITS; HEAVY IONS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

OXIDES;

EID: 37249005328     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.909510     Document Type: Conference Paper

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