Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2210-2216

  Gerardin, S ^a,b,c   Cester, A ^a,b,c   Paccagnella, A ^a,b,c   Gasiot, G ^d   Mazoyer, P ^d   Roche, P ^d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

CMOS; SEGR; Ultra thin gate oxides

Indexed keywords

CMOS; GATE CURRENT DEGRADATION; SEGR; ULTRA-THIN GATE OXIDES;

ELECTRIC POTENTIAL; IRRADIATION; MOS CAPACITORS; OXIDES; RADIATION EFFECTS; SUBSTRATES;

GATES (TRANSISTOR);

EID: 33144470739     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860690     Document Type: Conference Paper

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