Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3795-3800

  Hayama, K ^a   Takakura, K ^a   Ohyama, H ^a   Rafi J M ^b   Mercha, A ^c   Simoen, E ^c   Claeys, C ^c,d   Kokkoris, M ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e Demokritos Institute for Nuclear Physics   (Greece)

Author keywords

Fully depleted (FD) silicon on insulator (SOI); Gate coupling, metal oxide semiconductor field effect transistor (MOSFET); Proton irradiation, ultra thin gate

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS CAPACITORS; MOSFET DEVICES; POLYSILICON;

FULLY DEPLETED (FP)-SILICON-ON-INSULULATOR (SOI); GATE COUPLING; SHORT-CHANEL EFFECTS (SCE); ULTRA THIN GATES;

PROTON IRRADIATION;

EID: 11044234166     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839153     Document Type: Conference Paper

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