Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2252-2258

  Cester, Andrea ^a,b,c   Gerardin, Simone ^a,b,c   Paccagnella, Alessandro ^a,b,c   Simoen, Eddy ^a,d   Claeys, Cor ^a,d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d IMEC   (Belgium)

Author keywords

CMOS devices and integrated circuits reliability; Gate oxide reliability; Radiation effects on MOSFETs; Silicon on insulator

Indexed keywords

CMOS DEVICES AND INTEGRATED CIRCUITS RELIABILITY; GATE OXIDE RELIABILITY; RADIATION EFFECTS ON MOSFETS;

ELECTRIC FIELD EFFECTS; ELECTRONS; GATES (TRANSISTOR); IONS; IRRADIATION; MOSFET DEVICES; OXIDES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33144490099     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860666     Document Type: Conference Paper

References (21)

1. A. Cester, "Wear-out and breakdown of ultra-thin gate oxides after irradiation," Electron. Lett., vol. 38, pp. 1137-1139, 2002.
2. J. S. Suehle, E. M. Vogel, P. Roitman, J. F. Conley, A. H. Johnston, B. Wang, J. B. Bernstein, and C. E. Weintraub, "Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation," Appl. Phys. Lett., vol. 80, pp. 1282-1284, 2002.
3. B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, L. W. Massengill, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. John, and G. Lucovsky, "Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3045-3050, Dec. 2002.
4. A. Cester, S. Cimino, A. Paccagnella, G. Ghibaudo, G. Ghidini, and J. Wyss, "Accelerated wear-out of ultra-thin gate oxides after irradiation," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 729-734, Jun. 2003.
5. A. Cester, S. Cimino, E. Miranda, A. Candelori, G. Ghidini, and A. Paccagnella, "Statistical model for radiation induced wear-out of ultrathin gate oxides after exposure to heavy ion irradiation," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2167-2175, Dec. 2003.
6. A. Cester, S. Gerardin, A. Paccagnella, J. R. Schwank, G. Vizkelethy, A. Candelori, and G. Ghidini, "Drain current decrease in MOSFETs after heavy ion irradiation," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3150-3157, Dec. 2004.
7. B. Jun, H. D. Xiong, A. L. Sternberg, C. R. Cirba, D. Chen, R. D. Schrimpf, D. M. Fleetwood, J. R. Schwank, and S. Cristoloveanu, "Total dose effects on double gate fully depleted SOI MOSFETs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3767-3772, Dec. 2004.
8. P. Gouker, J. Burns, P. Wyatt, K. Warner, E. Austin, and R. Milanowski, "Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1776-1783, Dec. 2003.
9. K. Hayama, K. Takakura, H. Ohyama, J. M. Rafi, A. Mercha, E. Simoen, C. Claeys, and M. Kokkoris, "Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOS-FETs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3795-3800, Dec. 2004.
10. E. Simoen, A. Mercha, A. Morata, K. Hayama, G. Richardson, J. M. Rafi, E. Augendre, C. Claeys, A. Mohammadzadeh, H. Ohyama, and A. Romano-Rodriguez, "Short-channel radiation effect in 60 MeV proton irradiated 0.13 μm CMOS transistors," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2426-2432, Dec. 2003.
11. E. Simoen, J. M. Raff, A. Mercha, and C. Claeys, "Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation," Solid State Electron., vol. 48, pp. 1045-1054, Jun. 2004.
12. A. Cester, S. Gerardin, A. Paccagnella, E. Simoen, C. Claeys, and A. Candelori, "Heavy ion damage in ultra-thin gate oxide SOI MOSFETs," presented at the Radiation and Its Effects on Components and Systems (RADECS) Int. Conf., Cap d'Agde, France, 2005.
13. H. van Meer and K. De Meyer, "Fully depleted SOI CMOS," in Proc. 10th Int. Symp. Silicon-on-Insulator Technology and Devices X, The Electrochemical Society, vol. 2001-3, S. Cristoloveanu, G. K. Celler, P. L. F. Hemment, F. Assaderaghi, K. T. Izumi, and Y.-W. Kim, Eds., Pennington, NJ, 2001, p. 301.
14. J. Wyss, D. Bisello, and D. Pantano, "SIRAD: An irradiation facility at the LNL Tandem accelerator for radiation damage studies on semiconductor detectors and electronic devices and systems," Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol. 462, pp. 426-434, Apr. 2001.
15. A. Mercha, J. M. Rafi, E. Simoen, E. Augendre, and C. Claeys, ""Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1675-1682, Jul. 2003.
16. A. Scarpa, A. Paccagnella, F. Montera, G. Ghibaudo, G. Pananakakis, G. Ghidini, and P. G. Fuochi, "Ionizing radiation induced leakage current on ultra-thin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1818-1825, Dec. 1997.
17. L. Larcher, A. Paccagnella, M. Ceschia, and G. Ghidini, "A model of radiation induced leakage current (RILC) in ultra-thin gate oxides," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 1553-1561, Dec. 1999.
18. M. R. Shaneyfelt, J. R. Schwank, S. C. Witczak, D. M. Fleetwood, R. L. Pease, P. S. Winokur, L. C. Riewe, and G. L. Hash, "Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2539-2545, Dec. 2000.
19. A. J. Lelis, H. E. Boesch Jr., T. R. Oldham, and F. B. McLean, "Reversibility of trapped hole annealing," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1186-1191, Dec. 1988.
20. A. J. Lelis, T. R. Oldham, H. E. Boesch Jr., and F. B. McLean, "The nature of the trapped hole annealing process," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1808-1815, Dec. 1989.
21. D. E. Ioannou, F. L. Duan, S. P. Sinha, and A. Zaleski, "Opposite-channel-based injection of hot-carriers in SOI MOSFETs: Physics and applications," IEEE Trans. Electron Devices, vol. 45, no. 7, pp. 1147-1154, Jul. 1998.