Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2125-2128

  Hayama, K ^a   Takakura, K ^a   Yoneoka, M ^a   Ohyama, H ^a   Rafi J M ^b   Mercha, A ^c   Simoen, E ^c   Claeys, C ^c,d  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Back gate; Dose rate dependence; Electron irradiation; MOSFETs; SOI

Indexed keywords

DRAIN CURRENT; ELECTRON IRRADIATION; HYSTERESIS; SILICON ON INSULATOR TECHNOLOGY;

BACK GATE; COUPLING EFFECT; DOSE RATE DEPENDENCE;

MOSFET DEVICES;

EID: 34249030682     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.125     Document Type: Article

References (8)

1. Claeys C., and Simoen E. Radiation Effects in Advanced Semiconductor Materials and Devices (2002), Springer Verlag
2. Mayer D.C. Modes of operation and radiation sensitivity of ultrathin SOI transistors. IEEE Trans. Electron Dev. 37 (1990) 1280-1288
3. Hayama K., Takakura K., Ohyama H., Rafí J.M., Mercha A., Simoen E., Claeys C., and Kokkoris M. Impact of 7.5-MeV Proton Irradiation on Front-Back Gate Coupling Effect in Ultra Thin Gate Oxide FD-SOI n-MOSFETs. IEEE Trans. Nucl. Sci. 51 (2004) 3795-3800
4. Hayama K., Takakura K., Shigaki K., Ohyama H., Rafí J.M., Mercha A., Simoen E., and Claeys C. Impact of the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microel. Reliab. 46 (2006) 1731-1735
5. Schwank J.R., Ferlet-Cavrois V., Shaneyfelt M.R., Paillet P., and Dodd P.E. Radiation Effects in SOI Technologies. IEEE Trans. Nucl. Sci. 50 (2003) 522-538
6. S. J. Kim, J. Seon, K. W. Min, Y. H. Shin, W. Choe, Enhanced low dose rate sensitivity (ELDRS) observed in RADFET sensor, Proc. RADECS 2003, 669-671.
7. Mercha A., Rafi J.M., Simoen E., Augendre E., and Claeys C. Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs. IEEE Trans. Electron Dev. 50 (2003) 1675-1682
8. Hayama K., Takakura K., Okada S., Kudou T., Ohyama H., Rafí J.M., Martino J.A., Mercha A., Simoen E., and Claeys C. Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs. Physica B 376-377 (2006) 416-419