Improved electronic performance of HfO2/SiO2 stacking gate dielectric on 4H SiC

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3409-3413

  Cheong, Kuan Yew ^a   Moon, Jeong Moon ^b   Park, Tae Joo ^b   Kim, Jeong Hwan ^b,c   Hwang, Cheol Seong ^b   Kim, Hyeong Joon ^b   Bahng, Wook ^d   Kim, Nam Kyum ^d  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Seoul National University   (South Korea)

^c IMEC   (Belgium)

^d Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Dielectric materials; High dielectric constant gate; Leakage current; Leakage currents; Nitridation; Reliability

Indexed keywords

CARRIER CONCENTRATION; LEAKAGE CURRENTS; MOS DEVICES; NITRIDATION; PERMITTIVITY; SILICON CARBIDE;

HIGH DIELECTRIC-CONSTANT GATE; INTERFACE-TRAP DENSITY; OXIDE CHARGE; STACKING GATE DIELECTRIC;

GATE DIELECTRICS;

EID: 36949014367     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908545     Document Type: Article

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