Experimental and first-principles studies of the band alignment at the HfO2/4H-SiC (0001) interface

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1071-1074

  Tanner, Carey M ^a   Choi, Jongwoo ^a   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Band alignment; Density functional theory; Gate oxide; HfO2 4H SiC interface; High k dielectric; XPS

Indexed keywords

ATOMIC LAYER DEPOSITION; BUFFER LAYERS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND ALIGNMENT; GATE OXIDE;

HAFNIUM COMPOUNDS;

EID: 34247534477     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1071     Document Type: Conference Paper

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