Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Suzuno, M ^a   Ugajin, Y ^a   Murase, S ^a   Suemasu, T ^a   Uchikoshi, M ^b   Isshiki, M ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HOLE MOBILITY; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; THIN FILMS; TRANSPORT PROPERTIES;

ANNEALING TEMPERATURE;

IRON;

EID: 36749034853     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2816230     Document Type: Article

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