Magnetic and electrical properties of Mn-doped p-type β-FeSi 2 single crystals

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5413-5419

  Arushanov, E ^a,b   Ivanenko, L ^c   Vinzelberg, H ^a   Eckert, D ^a   Behr, G ^a   Rossler U K ^a   Muller K H ^a   Schneider, C M ^a   Schumann, J ^a  

^a IFW DRESDEN   (Germany)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECTS; BAND DEFORMATION; HALL COEFFICIENT; HALL RESISTIVITY; MAGNETIC AND ELECTRICAL PROPERTIES; MAGNETIC FIELD DEPENDENCES; MICROSCOPIC MECHANISMS; MN IONS; MN-DOPED; NEGATIVE MAGNETO-RESISTANCE; NONLINEAR MAGNETIC FIELDS; P-TYPE; SCATTERING MECHANISMS; SPIN DEPENDENT SCATTERING; SPIN-ORBIT COUPLINGS; TEMPERATURE RANGE;

ELECTRIC PROPERTIES; HALL EFFECT; MAGNETIC FIELDS; MAGNETIZATION; MANGANESE; SINGLE CRYSTALS;

DOPING (ADDITIVES);

EID: 18744398811     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511274     Document Type: Article

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