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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 8 A, 2000, Pages

Control of the conduction type of nondoped high mobility β-FeSi2 films grown from Si/Fe multilayers by change of Si/Fe ratios

(4) Takakura, Ken Ichiro a Suemasu, Takashi a Ikura, Yoshihiro a Hasegawa, Fumio a

a UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; IRON COMPOUNDS; MULTILAYERS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES;

IRON DISILICIDE;

SEMICONDUCTING FILMS;

EID: 0034249120 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l789 Document Type: Article

Times cited : (46)

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