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Volumn 43, Issue 4 A, 2004, Pages
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Boron doping for p-type β-FeSi2 films by sputtering method
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Author keywords
Boron; Dopant; Doping; p type; Silicide; Sputtering; FeSi2
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Indexed keywords
BORON;
CARRIER CONCENTRATION;
CRYSTAL STRUCTURE;
CRYSTALLINE MATERIALS;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
GRAIN BOUNDARIES;
LIGHT EMITTING DIODES;
MULTILAYERS;
OPTICAL SENSORS;
SECONDARY ION MASS SPECTROMETRY;
SPUTTERING;
THIN FILMS;
X RAY DIFFRACTION;
DOPANT;
DOPING;
HOLE CONCENTRATION;
N-TYPE CONDUCTIVITIES;
P-TYPE;
SILICIDE;
Β-FESI2;
IRON COMPOUNDS;
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EID: 2942596356
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.43.l504 Document Type: Article |
Times cited : (14)
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References (12)
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