Direct growth of [100]-oriented high-quality β-FeSi2 films on Si(001) substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 A, 2001, Pages

  Hiroi, N ^a   Suemasu, T ^a   Takakura, K ^a   Seki, N ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Molecular beam epitaxy (MBE); Multilayer technique; Reactive deposition epitaxy (RDE); FeSi2

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; MULTILAYERS; SILICON; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

REACTIVE DEPOSITION EPITAXY (RDE);

FILM GROWTH;

EID: 0035483612     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1008     Document Type: Article

References (16)