Donor and acceptor levels in undoped β-FeSi2 films grown on Si (001) substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages

  Takakura, K I ^a   Suemasu, T ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Accepter; Deep level; Donor; Intrinsic region; Iron disilicide

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; DEFECTS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ENERGY GAP; IRON COMPOUNDS; METALLIC FILMS; MULTILAYERS; SEMICONDUCTOR DIODES; SUBSTRATES;

ELECTROLUMINESCENCE PEAK WAVELENGTH;

FILM GROWTH;

EID: 0035867963     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l249     Document Type: Article

References (17)