Hole mobility in p-type β-FeSi2 single crystals

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 2, 1998, Pages 853-859

  Arushanov, E ^a,b,d   Lange, H ^a   Werner, J ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF KONSTANZ   (Germany)

^c IFW DRESDEN   (Germany)

^d INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE SCATTERING; ALUMINUM; BAND STRUCTURE; CRYSTAL IMPURITIES; IONIZATION OF SOLIDS; LIGHT SCATTERING; PHONONS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

HOLE MOBILITY; IRON DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032046824     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:2<853::AID-PSSA853>3.0.CO;2-9     Document Type: Article

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