Preparation and properties of high-purity β-FeSi2 single crystals

Physica Status Solidi (A) Applied Research

Volumn 160, Issue 2, 1997, Pages 549-556

  Behr, G ^a   Werner, J ^a   Weise, G ^a   Heinrich, A ^a   Burkov, A ^b   Gladun, C ^a  

^a IFW DRESDEN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; PHYSICAL PROPERTIES; SINGLE CRYSTALS; STOICHIOMETRY;

CHEMICAL VAPOUR TRANSPORT; IRON SILICIDE; NON INTENTIONAL DOPING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031117583     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199704)160:2<549::AID-PSSA549>3.0.CO;2-8     Document Type: Article

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