From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 639-645

  Kisielowski, C ^a   Bartel, T P ^a   Specht, P ^b   Chen, F R ^c   Shubina, T V ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b No 1760   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

HRTEM; InxGa1 xN; Indium precipitates; InN band gap; Noise limits

Indexed keywords

ENERGY GAP; PHOTOLUMINESCENCE; RADIATION DAMAGE; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM DISTRIBUTION; INDIUM PRECIPITATES; NOISE LIMITS;

INDIUM COMPOUNDS;

EID: 36048958230     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.041     Document Type: Article

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