Measurement of the indium segregation in InGaN based LEDs with single atom sensitivity

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5187, Issue , 2004, Pages 54-63

  Jinschek, Joerg R ^a   Kisielowski, Christian ^a   Van Dyck, Dirk ^b   Geuens, Philippe ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Exit wave reconstruction (EWR); Gallium nitride (GaN); HRTEM; Indium (In) distribution segregation; Indium gallium nitride (InGaN); Phase contrast; Quantum well; Transmission electron microscopy

Indexed keywords

INDIUM; ION BEAMS; MICROSCOPES; POTASSIUM COMPOUNDS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

EXIT WAVE RECONSTRUCTION (EWR); HRTEM; INDIUM (IN) DISTRIBUTION / SEGREGATION; INDIUM GALLIUM NITRIDE (INGAN); PHASE CONTRAST;

LIGHT EMITTING DIODES;

EID: 1842789955     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.513121     Document Type: Conference Paper

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