Quantitative electron microscopy of InN-GaN alloys

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 167-175

  Bartel, T ^a,d,e   Jinschek, J R ^a,b   Freitag, B ^c   Specht, P ^d   Kisielowski, C ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^c Thermo Fisher Scientific   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION VOLTAGE; ELEMENT DISTRIBUTION; LATTICE IMAGES; SPINODAL DECOMPOSITION;

ACCELERATION; ELECTRIC POTENTIAL; ELECTRON IRRADIATION; ELECTRON MICROSCOPY; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

INDIUM ALLOYS;

EID: 31144435185     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563511     Document Type: Conference Paper

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