Time, energy, and spatially resolved TEM investigations of defects in InGaN

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 536-539

  Jinschek, J R ^a   Kisielowski, C ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Band gap; EELS; Electron microscopy; InGaN; Strain

Indexed keywords

ELECTRON BEAMS; ELECTRON SPECTROSCOPY; ELECTRONS; ETCHING; INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

BAND GAP; EELS; ELECTRON TRANSPARENT SAMPLES; FIB PROCESS; INGAN;

CRYSTAL DEFECTS;

EID: 33645152940     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.136     Document Type: Conference Paper

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