Resistive switching of rose bengal devices: A molecular effect?

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Karthäuser, Silvia ^b   Lüssem, Björn ^d   Weides, Martin ^d   Alba, Manuela ^a   Besmehn, Astrid ^b   Oligschlaeger, Robert ^c   Waser, Rainer ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d Forschungszentrum Jülich ^*

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC SWITCHES; ELECTRODES; ZINC OXIDE;

BOTTOM ELECTRODES; RESISTIVE SWITCHING; ROSE BENGAL DEVICES; TOP ELECTRODES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33751106652     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364036     Document Type: Article

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