Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide

Journal of Physics D: Applied Physics

Volumn 40, Issue 9, 2007, Pages 2754-2758

  Guan, Weihua ^a   Long, Shibing ^a   Liu, Ming ^a   Li, Zhigang ^a   Hu, Yuan ^a   Liu, Qi ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; METAL ANALYSIS; NANOCRYSTALS; NONVOLATILE STORAGE; VOLTAGE MEASUREMENT;

EXPONENTIAL DECAYING; GATE BIAS; GATE OXIDE; RETENTION PERFORMANCE;

MOS CAPACITORS;

EID: 34247536761     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/9/012     Document Type: Article

References (23)

1. Reference.
2. Tiwari S, Rana F, Hanafi H, Hartsten A, Crabbe E F and Chan K 1996 Appl. Phys. Lett. 68 1377-9
3. Wu J H and Li P W 2007 Semicond. Sci. Technol. 22 S89-S92
4. Yim S-S, Lee M-S, Kim K-S and Kima K-B 2006 Appl. Phys. Lett. 89 093115
5. Lin Y-H, Chien C-H, Lin C-T, Chang C-Y and Lei T-F 2005 IEEE Electron Devices Lett. 26 154-6
6. Chen J H, Yoo W J, Chan D S H and Tang L J 2005 Appl. Phys. Lett. 86 073114
7. Zhu Y, Li B, Liu J, Liu G F and Yarmoff J A 2006 Appl. Phys. Lett. 89 233113
8. Shi Y, Saito K, Ishikuro H and Hiramoto T 1998 J. Appl. Phys. 84 2358-60
9. Koh B H, Kan E W H, Chim W K, Choi W K, Antoniadis D A and Fitzgerald E A 2005 J. Appl. Phys. 97 124305
10. Liu Z, Lee C, Narayanan V, Pei G and Kan E C 2002 IEEE Trans. Electron Devices 49 1606-13
11. Boer E A, Bell L D, Brongersma M L, Atwater H A, Ostraat M L and Flagan R C 2001 Appl. Phys. Lett. 78 3133-5
12. Baron T, Gentile P, Magnea N and Mur P 2001 Appl. Phys. Lett. 79 1175-7
13. Banerjee S, Salem M A and Oda S 2003 Appl. Phys. Lett. 83 3788-90
14. Porti M, Avidano M, Nafría M, Aymerich X, Carreras J and Garrido B 2005 J. Appl. Phys. 98 056101
15. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
16. Huang S, Banerjee S, Tung R T and Oda S 2003 J. Appl. Phys. 93 576-81
17. Ioannou-Sougleridis V and Nassiopoulou A G 2003 J. Appl. Phys. 94 4084-7
18. Liu Y, Chen T P, Ding L, Zhang S, Fu Y Q and Fung S 2006 J. Appl. Phys. 100 096111
19. Busseret C, Souifi A, Baron T and Guillot G 2000 Superlatt. Microstruct. 28 493-500
20. Huang S, Banerjee S and Oda S 2002 Mater. Res. Soc. Symp. Proc. 686 A 8.8.1-8
21. Ng T H, Chim W K, Choi W K, Ho V, Teo L W, Du A Y and Tung C H 2004 Appl. Phys. Lett. 84 4385-7
22. Lee J J and Kwong D L 2005 IEEE Trans. Electron Devices 52 507-11
23. Zhao D, Zhu Y and Liu J 2006 Solid State Electron. 50 268-71