Critical strain region evaluation of self-assembled semiconductor quantum dots

Nanotechnology

Volumn 18, Issue 47, 2007, Pages

  Sales, D L ^a   Pizarro, J ^a   Galindo, P L ^a   Garcia, R ^a   Trevisi, G ^b   Frigeri, P ^b   Nasi, L ^b   Franchi, S ^b   Molina, S I ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; NUCLEATION; SELF ASSEMBLY; STACKING FAULTS; STRAIN CONTROL;

CRITICAL STRAIN ZONES; PEAK FINDING METHODS; PEAK PAIRS METHODS; STRAIN DISTRIBUTIONS;

SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM; ARSENIC; GALLIUM; INDIUM; NANOMATERIAL; QUANTUM DOT;

ARTICLE; COMPRESSIVE STRENGTH; ELASTICITY; FINITE ELEMENT ANALYSIS; MATHEMATICAL MODEL; NANOTECHNOLOGY; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 35748951609     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/47/475503     Document Type: Article

References (39)

1. Stranski I N and Krastanow L 1937 Sitz.ber. Akad. Wiss. Wien, Math.-Nat.wiss. Kl. 146 797
2. Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40 939-41
3. Chen S D, Chen Y Y and Lee S C 2005 Appl. Phys. Lett. 86 253104
4. Tang S F, Chiang C D, Weng P K, Gau Y T, Luo J J, Yang S T, Shih C C, Lin S Y and Lee S C 2006 IEEE Photon. Technol. Lett. 18 986-8
5. Li L H, Rossetti M, Fiore A and Patriarche G 2006 Electron. Lett. 42 638-40
6. Karachinsky L Y et al 2005 Electron. Lett. 41 478-80
7. Lundstrom T, Schoenfeld W, Lee H and Petroff P M 1999 Science 286 2312-4
8. Kroutvar M, Ducommun Y, Finley J J, Bichler M, Abstreiter G and Zrenner A 2003 Appl. Phys. Lett. 83 443-5
9. Maximov M V et al 2000 Phys. Rev. B 62 16671-80
10. Kuo M K, Lin T R, Liao B T and Yu C H 2005 Physica E 26 199-202
11. Davies J H 1998 J. Appl. Phys. 84 1358-65
12. Jin-Phillipp N Y and Phillipp F 1999 J. Microsc. 194 161-70
13. Nabetani Y, Yamamoto N, Tokuda D and Sasaki A 1995 J. Cryst. Growth 146 363-7
14. Sears K, Wong-Leung J, Tan H H and Jagadish C 2006 J. Appl. Phys. 99 113503
15. Maksimov M V et al 2004 Semiconductors 38 1207-11
16. Shamirzaev T S, Gilinsky A M, Kalagin A K, Toropov A I, Gutakovskii A K and Zhuravlev K S 2006 Semicond. Sci. Technol. 21 527-31
17. Rosenauer A, Kaiser S, Reisinger T, Gebhardt W and Gerthsen D 1996 Optik 102 63-9
18. Hÿtch M J, Snoeck E and Kilaas R 1998 Ultramicroscopy 74 131-46
19. Galindo P L, Kret S, Sanchez A M, Laval J Y, Yá̃ez A, Pizarro J, Guerrero E, Ben T and Molina S I 2007 Ultramicroscopy 107 1186-93
20. Galindo P L, Yá̃ez A, Pizarro J, Guerrero E, Ben T and Molina S I 2005 Microscopy of Semiconducting Materials (Oxford) ed A G Cullis (Bristol, UK: Springer) pp 191-4
21. Liu G R and Quek Jerry S S 2002 Semicond. Sci. Technol. 17 630-43
22. Franchi S, Trevisi G, Seravalli L and Frigeri P 2003 Prog. Cryst. Growth Charact. Mater. 47 166-95
23. Briones F and Ruiz A 1991 J. Cryst. Growth 111 194-9
24. Bosacchi A, Frigeri P, Franchi S, Allegri P and Avanzini V 1997 J. Cryst. Growth 175/176 771-6
25. Gurioli M, Testa S, Altieri P, Sanguinetti S, Grilli E, Guzzi M, Trevisi G, Frigeri P and Franchi S 2003 Physica E 17 19-21
26. Heyn Ch 2001 Phys. Rev. B 64 165306
27. Muraki K, Fakatsu S and Shiraki Y 1992 Appl. Phys. Lett. 61 557-9
28. Rosenauer A, Gerthsen D, Van Dyck D, Arzberger M, Böhm G and Abstreiter G 2001 Phys. Rev. B 64 245334
29. Offermans P, Koenraad P M, Nötzel R and Wolter J H 2005 Appl. Phys. Lett. 87 111903
30. Zhi D, Davock H, Murray R, Roberts C, Jones T S, Pashley D W, Goodhew P J and Joyce B A 2001 J. Appl. Phys. 89 2079-83
31. Walther T, Cullis A G, Norris D J and Hopkinson M 2001 Phys. Rev. Lett. 86 2381-4
32. Wang P, Bleloch A L, Falke M, Goodhew P J, Ng J and Missous M 2006 Appl. Phys. Lett. 89 072111
33. Fleming R M, McWhan D B, Gossard A C, Wiegmann W and Logan R A 1980 J. Appl. Phys. 51 357-63
34. Lee D T and Schachter B 1980 Int. J. Comput. Inf. Sci. 9 219-242
35. Andreev A D, Downes J R, Faux D A and O'Reilly E P 1999 J. Appl. Phys. 86 297-305
36. Faux D A and Haigh J 1990 J. Phys.: Condens. Matter 2 10289
37. Levinstein M, Rumyantsev S and Shur M (ed) 1996 Handbook Series on Semiconductor Parameters vol 1 (London: World Scientific)
38. Levinstein M, Rumyantsev S and Shur M (ed) 1999 Handbook Series on Semiconductor Parameters vol 2 (London: World Scientific)
39. Chu H J and Wang J 2005 J. Appl. Phys. 98 034315