Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Chen, Shen De ^a   Chen, Ying Ying ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; INFRARED RADIATION; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN RATE;

SOLID-SOURCE; SPIN ORBIT; STRAIN FIELD; TRANSVERSE MAGNETIC FIELD;

ELECTRIC FIELD EFFECTS;

EID: 24344489072     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929881     Document Type: Article

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