A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Sears, K ^a   Wong Leung, J ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

QD LAYER; STACKING FAULT PYRAMID FORMATION; V-SHAPED DEFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745252158     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2197038     Document Type: Article

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