Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 443-445

  Kroutvar, M ^a   Ducommun, Y ^a   Finley, J J ^a   Bichler, M ^a   Abstreiter, G ^a   Zrenner, A ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; OPTICAL DATA STORAGE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CHARGE STORAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042126854     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588368     Document Type: Article

References (9)

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9. write due to the quantum confined Stark effect: during the write cycle, |F|∼300 kV/cm, whereas the device is close to flat-band conditions (F∼0 V/cm) during the read cycle.