High-power singlemode CW operation of 1.5 μm-range quantum dot GaAs-based laser

Electronics Letters

Volumn 41, Issue 8, 2005, Pages 478-480

  Karachinsky, L Ya ^a,b   Kettler, T ^b   Gordeev, N Yu ^a   Novikov, I I ^a   Maximov, M V ^a   Shernyakov, Yu M ^a   Kryzhanovskaya, N V ^a   Zhukov, A E ^a   Semenova, E S ^a   Vasil'ev, A P ^a   Ustinov, V M ^a   Ledentsov, N N ^a,b,c   Kovsh, A R ^c   Shchukin, V A ^a,b,c   Mikhrin, S S ^c   Lochmann, A ^b   Schulz, O ^b   Reissmann, L ^b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NL Nanosemiconductor GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL QUALITY; PULSED EXCITATION; TELECOM WAVELENGTHS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

CAMERAS; CHARGE COUPLED DEVICES; CURRENT DENSITY; QUANTUM EFFICIENCY; ROBUSTNESS (CONTROL SYSTEMS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

CONTINUOUS WAVE LASERS;

EID: 18144391587     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050536     Document Type: Article

References (9)

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