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Volumn 21, Issue 4, 2006, Pages 527-531

Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: Evidence for lateral inter-dot transport

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

EID: 33644968829     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/019     Document Type: Article
Times cited : (22)

References (40)
  • 20
    • 0016962738 scopus 로고
    • In order to find the absorption coefficient at the laser energy used we extrapolate the data by Monemar B, Shih K K and Pettit G D 1976 J. Appl. Phys. 47 2604
    • (1976) J. Appl. Phys. , vol.47 , Issue.6 , pp. 2604
    • Monemar, B.1    Shih, K.K.2    Pettit, G.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.