High-temperature operation normal incident 256 × 256 InAs - GaAs quantum-dot infrared photodetector focal plane array

IEEE Photonics Technology Letters

Volumn 18, Issue 8, 2006, Pages 986-988

  Tang, Shiang Feng ^a   Chiang, Cheng Der ^a   Weng, Ping Kuo ^a   Gau, Yau Tang ^a   Luo, Jiunn Jye ^a   Yang, San Te ^a   Shih, Chih Chang ^a   Lin, Shih Yen ^b   Lee, Si Chen ^c  

^a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Focal plane array (FPA); Midwavelength infrared (IR); Quantum dot infrared photodetector (QDIP)

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; INFRARED IMAGING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SOLDERING;

FOCAL PLANE ARRAY (FPA); MIDWAVELENGTH INFRARED (IR); QUANTUM-DOT INFRARED PHOTODETECTOR (QDIP);

INFRARED DETECTORS;

EID: 33645844288     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.873458     Document Type: Article

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