Defect formation in self-assembling quantum dots of InGaAs on GaAs: A case study of direct measurements of local strain from HREM

Journal of Microscopy

Volumn 194, Issue 1, 1999, Pages 161-170

  Jin Phillipp, N Y ^a   Phillipp, F ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Defect formation; Direct strain measurements; HREM (high resolution electron microscopy); InGaAs GaAs; Local strain; Quantum dots

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS; SHEAR STRAIN; STACKING FAULTS; STRAIN MEASUREMENT;

CASE-STUDIES; DEFECT COMPLEX; DEFECTS FORMATION; DIRECT STRAIN MEASUREMENT; HIGH RESOLUTION ELECTRON MICROSCOPY; INGAAS/GAAS; LOCAL STRAINS; QUANTUM DOT; SELF-ASSEMBLING; STRAINS MEASUREMENTS;

GALLIUM ARSENIDE;

ARTICLE; CALCULATION; ELECTRON MICROSCOPY; IMAGE ANALYSIS; IMAGE RECONSTRUCTION; MATHEMATICAL ANALYSIS; PRIORITY JOURNAL;

EID: 0033004878     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1999.00472.x     Document Type: Article

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