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Volumn 42, Issue 11, 2006, Pages 638-640

1.43μm InAs bilayer quantum dot lasers on GaAs substrate

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; WAVEGUIDES;

BILAYER; EDGE EMITTING QUANTUM DOT LASERS; OUTPUT POWER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744510953 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20060918 Document Type: Article

Times cited : (21)

References (11)

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8
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