Dual-band infrared imaging analyses for 256×256 InAs/GaAs quantum dot infrared photodetector focal plane array

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6542, Issue I, 2007, Pages

  Tang, Shiang Feng ^a   Lee, Cheng De ^b   Shih, Chih Chang ^a   Chiang, Cheng Der ^a   Gau, Yau Tang ^a   Yang, San Te ^a   Sun, Tai Ping ^c   Lu, Fu Fa ^a  

^a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Dual band; Focal plane array (FPA); InAs GaAs; Quantum dot infrared photodetector (QDIP); Quantum dots (QDs)

Indexed keywords

EPITAXIAL GROWTH; FOCAL PLANE ARRAYS; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DUAL BAND; FOCAL PLANE ARRAY (FPA); QUANTUM DOT INFRARED PHOTODETECTOR (QDIP);

IMAGE ANALYSIS;

EID: 35649028951     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.719123     Document Type: Conference Paper

References (49)

1. D.L. Huffaker and D.G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 73, pp. 520-522, 1998.
2. P. Bhattacharya, K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. Jiang, N. Chevela, T. Norris, T. Sosnowski, J. Laskar, and M. Ramanamurty, "In(Ga)As/GaAs self organized quantum dot laser: DC and small signal modulation properties," IEEE Trans. Electron. Devices, vol. 46, pp. 871, May 1999.
3. Z. Ye, J. C. Campbell, Z. Chen, E.-T. Kim, and A. Madhukar, "Normal-Incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity," IEEE J. Quantum Electron., vol. 38, no. 9, pp. 1234-1237, Sep. 2003.
4. S. D. Gunapala, S. V. Bandara, C. J. Hill, D. Z. Ting, J. K. Liu, S. B. Rafol, E. R. Blazejewski, J. M. Mumolo, S. A. Keo, S. Krishna, Y. C. Chang, and C. A. Shott, "Long-wavelength Infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane array," Proc. of SPIE., vol 6206, pp. 62060J-1-9, 2006.
5. Z. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. C. Campbell, "Normal incidence InAs/Al Ga As quantum dot infrared photodetectors with undoped active region," J. Appl. Phys., vol. 89, pp. 4558-4563, 2001.
6. L. Chu, A. Zrenner, G. B"ohm, and G. Abstreiter, "Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots," Appl. Phys. Lett., vol. 75, pp. 3599-3601, 1999.
7. P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa, and A. G. U. Perera, "Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature," Appl. Phys. Lett., vol. 86, pp. 191 106-1-191 106-3, 2005.
8. S.-F. Tang, S.-Y. Lin, S.-C. Lee, C. H. Kuan, and Y.-T. Cherng, "High temperature operated (-250 K) photovoltaicphotoconductive (PV-PC) mixed mode InAs/GaAs quantum dot infrared photodetector," in IEEE Tech. Dig. Int. Electron Devices Meeting, pp. 597-600, 2000.
9. S.-F. Tang, S.-Y. Lin, and S.-C. Lee, "Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector," Appl. Phys. Lett., vol. 78, pp. 2428-2430, 2001.
10. J-W. Kim, J-E. Oh, S-C. Hong, C-H. Park, and T-K. Yoo, "Room temperature far infrared (8-10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity," IEEE Electron. Dev. Lett., vol. 21, pp. 329-331, July 2000.
11. A. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly, "High-detectivity normal-incidence, midinfrared (λ-4 μm) InAs/GaAs quantum dot detector operating at 150 K," Appl. Phys. Lett., vol. 79, pp. 421-423, 2001.
12. S. M. Kim and J. S. Harris, "Multicolor InGaAs quantum-dot infrared photodetectors," IEEE Photon. Technol. Lett., vol. 16, no. 11, pp. 2538-2540, Nov. 2004.
13. Z. Ye, J. C. Campbell, Z. Chen, E.-T. Kim, and A. Madhukar, "InAs quantum dot infrared photodetectors with In GaAs strain-relief cap layers," J. Appl. Phys., vol. 92, pp. 7462-7468, 2002.
14. Shiang-Feng Tang, Shih-Yen Lin, and Si-Chen Lee, "InAs quantum dots on (001) GaAs substrate with two groups of different sizes under arsenic shutter closed condition," J. Nanoparti. Res. 3, 389, 2001.
15. Z. Ye, J. C. Campbell, Z. Chen, E.-T. Kim, and A. Madhukar, "Noise and photoconductive gain in InAs quantumdot infrared photodetectors," Appl. Phys. Lett., vol. 83, pp. 1234-1236, 2003.
16. H. C. Liu, "Quantum dot infrared photodetector," Opto-Electron. Rev., vol. 11, pp. 1-5, 2003.
17. V. Ryzhii, "The theory of quantum-dot infrared phototransistors, " Semicond. Sci. Technol, vol. 11, pp. 759-765, 1996.
18. Z. Chen, E.-T. Kim, and A. Madhukar, "Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs.001: Quantum dots in n-i-n photodetector structures," J. Vac. Sci. Technol. B, vol. 20, pp. 1243-1246, 2002.
19. S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo Jr, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, "Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors," Appl. Phys. Lett., vol. 86, pp. 193 501-1-193 501-3, 2005.
20. Shiang-Feng Tang, Cheng-Der Chiang, Ping-Kuo Weng, Yau-Tang Gau, Jihnn-Jye Ruo, San-Te Yang, ChihChang Shih, Shih-Yen Lin and Si-Chen Lee, "High-Temperature Operation Normal Incident 256×256 InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array," IEEE Photonics Tech. Lett. Vol. 18, pp. 986-988, 2006.
21. K.W. Berryman, S. A. Lyon, and M. Segev, "Mid-infrared photoconductivity in InAs quantum dots," Appl. Phys. Lett., vol. 70, pp. 1861-1863, 1997.
22. V. G. Talalaev, B. V. Novikov, S. Y. Verbin, A. B. Novikov, D. S. Thath, I. V. Shchur, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, G. É. Tsyrlin, V. N. Petrov, V. M. Ustinov, A. E. Zhukov, and A. Y. Egorov, "Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces," Semiconductors, vol. 34, pp. 453-461, 2000.
23. P. B. Joyce, E. C. Le Ru, T. J. Krzyzewski, G. R. Bell, R. Murray, and T. S. Jones, "Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology," Phys. Rev. B, vol. 66, pp. 075 316-1-075 316-8, 2002.
24. Y. I. Mazur, X.Wang, Z. M.Wang, G. J. Salamo, M. Xiao, and H. Kissel, "Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers," Appl. Phys. Lett., vol. 81, pp. 2469-2471, 2002.
25. A. D. Stiff-Roberts, S. Chakrabarti, S. Pradhan, B. Kochman, and P. Bhattacharya, "Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 80, pp. 3265-3267, 2002.
26. J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T. O'Sullivan, T. Sills, M. Razeghi, G. J. Brown, and M. Z. Tidrow, "Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 84, pp. 2232-2234, 2004.
27. S.-F. Tang, S.-Y. Lin, and S.-C. Lee, "InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al Ga As blocking barriers," IEEE Trans. Electron Devices, vol. 49, no. 8, pp. 1341-1347, Aug. 2002.
28. C.-Y. Huang, T.-M. Ou, S.-T. Chou, C.-S. Tsai, M.-C.Wu, S.-Y. Lin, and J.-Y. Chi, "Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors," J. Vac. Sci Tech. B, vol. 23, pp. 1909-1912, 2005.
29. A. Nauen, F. Hohls, N. Maire, K. Pierz, and R. J. Haug, "Shot noise in tunneling through a single quantum dot," Phys. Rev. B, vol. 70, pp. 033 305-1-033 305-4, 2004.
30. R. Rehm, H. Schneider, C. Sch"onbein, and M. Walther, "Noise current investigations of g-r noise limited and shot noise limited QWIPs," Physica E, vol. 7, pp. 124-129, 2000.
31. J.-Y. Duboz, H. C. Liu, Z. R. Wasilewski, M. Byloss, and R. Dudek, "Tunnel current in quantum dot infrared photodetectors," J. Appl. Phys., vol. 93, pp. 1320-1322, 2003.
32. M. Ryzhii, V. Ryzhii, and V. Mitin, "Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: Ensemble Monte Carlo particle modeling," Microelectron. J., vol. 34, pp. 411-414, 2003.
33. C.-C. Hsieh, C.-Y.Wu, and T.-P. Sun, "A new cryogenic CMOS readout structure for infrared focal plane array," IEEE J. Solid-State Circuits, vol. 32, no. 8, pp. 1192-1199, Aug. 1997.
34. J. F. Johnson, "Hybrid infrared focal plane signal and noise model," IEEE Trans. Electron Devices, vol. 46, no. 1, pp. 96-108, Jan. 1999.
35. K.W. Berryman, S.A. Lyon, and M. Segev, "Mid-infrared photoconductivity in InAs quantum dots," Appl. Phys. Lett., vol. 70, pp. 1861-1863, 1997.
36. J. Phillips, K. Kamath, and P. Bhattacharya, "Far-infrared photoconductivity in self organized InAs quantum dots," Appl. Phys. Lett., vol. 72, pp. 2020-2022, 1998.
37. D. Pan, E. Towe, and S. Kennerly, "Normal incidence intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 73, pp. 1937-1939, 1998.
38. I.N. Stranski and L. Krastanow, Sitzungsberichte d. Akad. D. Wissenschaften in Wien, Abt. IIb, Band 146, pp.146, 1937.
39. D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. Denbaars, and P.M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces," Appl. Phys. Lett., vol. 63, pp. 3202-3204, 1993.
40. Q. Xie, P. Chen, A. Kalburge, T.R. Ramachandran, A. Nayfonov, A. Konkar, and A. Madhukar, "Realization of optically active strained InAs island quantum boxes on GaAs (100) via molecular beam epitaxy and the role of island induced strain fields," J. Cryst. Growth, vol. 150, p. 357, 1995.
41. M. Tabuchi, S. Noda, and A. Sasaki, "Strain energy and critical thickness of heteroepitaxial InGaAs layers on GaAs substrate," J. Cryst. Growth, vol. 115, p. 169, 1991.
42. P.R. Berger, K. Chang, P. Bhattacharya, J. Singh, and K.K. Bajaj, "Role of strain and growth conditions on the growth front profile of InxGal-xAs on GaAs during the pseudomorphic growth regime," Appl. Phys. Lett., vol. 53, pp. 684-686, 1988.
43. F.E. Prins, G. Lehr, M. Burkad, S. Nikitin, H. Schweizer, and G. Smith,"Quantum dots and quantum wires with high optical quality by implantation-induced intermixing," Jpn. J. Appl. Phys., vol. 32, pp. 6228, 1993.
44. H. Jiang and J. Singh, "Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study," Phys. Rev. B, vol. 56, pp. 4696, 1996.
45. Z. Ye, J.C. Campbell, Z. Chen, E.T. Kim, I. Mukhametzhanov, J. Tie, and A. Madhukar, "Bias-dependent dualspectral InAs/In0.15Ga0.85As quantum dot infrared photodetectors," in Proc. IEEE LEOS Annual Meeting, San Diego, CA, pp. 766, Nov. 2001.
46. A.D. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly, "Normal-incidence, high-temperature, mid-infrared, InAs/GaAs vertical quantum-dot infrared photodetector," IEEE J. Quant. Electron., vol. 37, pp. 1272, Nov. 2001.
47. S-W. Lee, K. Hirakawa, and Y. Shimada, "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures," Appl. Phys. Lett., vol. 75, pp. 1428-1430, 1999.
48. John Lester Miller, "Principles of infrared technology," International Thomson Publishing, pp. 336-341, New York, 1994.
49. V. Ryzhii, " Intersubband infrared photodetectors," World Scientific Publishing, pp. 673-674, New Jersey, 2003.