InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers

IEEE Transactions on Electron Devices

Volumn 49, Issue 8, 2002, Pages 1341-1347

  Tang, Shiang Feng ^b   Lin, Shih Yen ^c   Lee, Si Chen ^a,d  

^a IEEE

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c Land Mark Optoelectronics Corporation   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Infrared photodetector; Molecular beam epitaxy; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

BLOCKING BARRIERS; DETECTION WINDOW; PEAK RESPONSIVITY; PEAK SPECIFIC DETECTIVITY; QUANTUM DOT INFRARED PHOTODETECTOR; ZERO BIAS;

INFRARED DETECTORS;

EID: 0036684682     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801441     Document Type: Article

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