InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7462-7468

  Ye, Zhengmao ^a   Campbell, Joe C ^a   Chen, Zhonghui ^b   Kim, Eui Tae ^b   Madhukar, Anupam ^b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; ETCHING; FABRICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOCURRENTS; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN-RELIEF;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037115622     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517750     Document Type: Article

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