High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 597-599

  Tang, S F ^a   Lin, S Y ^a   Lee, S C ^a   Kuan, C H ^a   Cherng, Y T ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

INFRARED DETECTORS;

EID: 0034452630     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)