InAs quantum dots on (001) GaAs substrate with two groups of different sizes under arsenic shutter closed condition

Journal of Nanoparticle Research

Volumn 3, Issue 5-6, 2001, Pages 489-492

  Tang, Shiang Feng ^a   Lin, Shih Yen ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

AFM; Growth mechanism; InAs; MBE; Quantum dots; Self assembling

Indexed keywords

EID: 0035623412     PISSN: 13880764     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1012563421356     Document Type: Article

References (8)

1. Chu L., M. Arzberger, G. Böhm & G. Absteiter, 1999. J. Appl. Phys. 85, 2355.
2. Chang S.Z., T.C. Chang & S.C. Lee, 1993. J. Appl. Phys. 73, 4916.
3. Dai Y.T., J.C. Fan, Y.F. Chen, R.M. Lin, S.C. Lee & H.H. Lin, 1997. J. Appl. Phys. 82, 4489.
4. Grundmann M., N. Ledenstov, R. Heitz, L. Eckey, J. Christen, J. Bohrer, D. Bimberg, S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V. Ustinov, A. Egorov, A. Zhukov, P. Kopev & Z. Alferov, 1995. Phys. Status Solidi B 188, 249.
5. Kamath K., N. Chervela, K.K. Linder, T. Sosnowski, H.T. Jiang, T. Norris, J. Singh & P. Bhattacharya, 1997. Appl. Phys. Lett. 71, 927.
6. Kong M.-Y., Xiao-Liang, D. Pan, Y.-P. Zeng, J. Wang & Weikun Ge, 1999. J. Appl. Phys. 86, 1456.
7. Phillips J., K. Kamath, X. Zhou, N. Chervela & P. Bhattacharya, 1997. Appl. Phys. Lett. 71, 2079.
8. Wang X.C., S.J. Xu, S.J. Chua, Z.H. Zhang, W.J. Fan, C.H. Wang, J. Jiang & X.G. Xie, 1999. J. Appl. Phys. 86, 2687.