Multicolor InGaAs quantum-dot infrared photodetectors

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2538-2540

  Kim, Seongsin M ^a   Harris, James S ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

DARK CURRENT; INTERSUBBAND TRANSITION; QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

INFRARED DETECTORS;

EID: 7744238637     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.835197     Document Type: Article

References (11)

1. V. Ryzhii, "The theory of quantum-dot infrared phototransistors," [i Semicond. Sci. Technol. i], vol. 11, pp. 759-765, 1996.
2. E. Towe and D. Pan, "Semiconductor quantum dot nanostructures: their applications in a new class of infrared photodetectors," [i IEEE J. Select. Quantum Electron. i], vol. 6, pp. 408-421, May/June 2000.
3. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector," [i Appl. Phys. Lett. i], vol. 73, pp. 963-965, 1998.
4. A. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly, "Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector," [i IEEE J. Quantum Electron. i], vol. 37, pp. 1412-1420, Nov. 2001.
5. H. Liu, M. Gao, J. McCaffey, Z. Wasilewski, and S. Fafard, "Qauntum dot infrared photodetectors," [i Appl. Phys. Lett. i], vol. 78, pp. 79-81, 2001.
6. 0.85As dots-in-a-well detector," [i Appl. Phys. Lett. i], vol. 81, pp. 1369-1371, 2002.
7. X. Jiang, S. Li, and M. Tidrow, "Investigation of a multistack voltage tunable four color quantum well infrared photodetector for mid and long wavelength infrared detection," [i IEEE J. Quantum Electron. i], vol. 35, pp. 1685-1692, Nov. 1999.
8. Z. Ye, J. Campbell, Z. Chen. E. Kim, and A. Madhukar, "Voltage controllable multiwavelength InAs quantum dot infrared photodetectors for mid- and far-infrared detection," [i J. Appl. Phys. i], vol. 92, pp. 4141-4143, 2002.
9. Z. Chen, E. Kim, and A. Madhukar, "Normal-incident voltage tunable middle and long wavelength infrared photoresponse in self-assembled InAs quantum dots," [i Appl. Phys. Lett. i], vol. 80, pp. 2490-2492, 2002.
10. S. M. Kim, Y. Wang, M. Keever. and J. S. Harris, "High frequency modulation characteristics of 1.3 um InGaAs quantum dot lasers," [i IEEE Photon. Technol. Lett. i], vol. 16, pp. 377-380, Feb. 2004.
11. O. Stier, M. Grundmann, and D. Bimberg, "Electronic and optical properties of strained quantum dots modeled by 8-band k.p. theory," [i Phys. Rev. B i], vol. 59, pp. 5688-5701, 1999.