메뉴 건너뛰기




Volumn 34, Issue 5-8, 2003, Pages 411-414

Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: Ensemble Monte Carlo particle modeling

Author keywords

Electric field distribution; Monte Carlo particle modeling; Quantum dot infrared photodetector

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EID: 0037567414     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00036-3     Document Type: Conference Paper
Times cited : (9)

References (12)
  • 1
    • 0030143645 scopus 로고    scopus 로고
    • The theory of quantum dot infrared phototransistors
    • Ryzhii V. The theory of quantum dot infrared phototransistors. Semicond. Sci. Technol. 11:1996;759-765.
    • (1996) Semicond. Sci. Technol. , vol.11 , pp. 759-765
    • Ryzhii, V.1
  • 2
    • 0035326975 scopus 로고    scopus 로고
    • Device model for quantum dot infrared photodetectors and their dark-current characteristics
    • Ryzhii V., Khmyrova I., Pipa V., Mitin V., Willander W. Device model for quantum dot infrared photodetectors and their dark-current characteristics. Semicond. Sci. Technol. 16:2001;331-338.
    • (2001) Semicond. Sci. Technol. , vol.16 , pp. 331-338
    • Ryzhii, V.1    Khmyrova, I.2    Pipa, V.3    Mitin, V.4    Willander, W.5
  • 3
    • 0001239453 scopus 로고    scopus 로고
    • Analysis of the photocurrent in quantum dot infrared photodetectors
    • Ryzhii V. Analysis of the photocurrent in quantum dot infrared photodetectors. Jpn. J. Appl. Phys. 40:2001;L148-L150.
    • (2001) Jpn. J. Appl. Phys. , vol.40
    • Ryzhii, V.1
  • 4
    • 0035927092 scopus 로고    scopus 로고
    • Negative differential photoconductivity in quantum-dot infrared photodetectors
    • Ryzhii V. Negative differential photoconductivity in quantum-dot infrared photodetectors. Appl. Phys. Lett. 78:2001;3346-3348.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 3346-3348
    • Ryzhii, V.1
  • 6
    • 0001163227 scopus 로고    scopus 로고
    • Far-infrared photoconductivity in self-organized InAs quantum dots
    • Phillips J., Kamath K., Bhattacharya P. Far-infrared photoconductivity in self-organized InAs quantum dots. Appl. Phys. Lett. 72:1998;2020-2022.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 2020-2022
    • Phillips, J.1    Kamath, K.2    Bhattacharya, P.3
  • 8
    • 0034187990 scopus 로고    scopus 로고
    • Semiconductor quantum-dot nanostructures: Their applications in a new class of infrared photodetectors
    • Towe E., Pan D. Semiconductor quantum-dot nanostructures: their applications in a new class of infrared photodetectors, J. Selected Topics Quantum Electron. 6:2000;408-421.
    • (2000) J. Selected Topics Quantum Electron. , vol.6 , pp. 408-421
    • Towe, E.1    Pan, D.2
  • 9
    • 79956032406 scopus 로고    scopus 로고
    • Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots
    • Chen Z., Kim E.-T., Madhukar A. Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots. Appl. Phys. Lett. 80:2002;2490-2492.
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 2490-2492
    • Chen, Z.1    Kim, E.-T.2    Madhukar, A.3
  • 10
    • 0036536221 scopus 로고    scopus 로고
    • Evaluation of the fundamental properties of quantum dot infrared detectors
    • Phillips J. Evaluation of the fundamental properties of quantum dot infrared detectors. J. Appl. Phys. 91:2002;4590-4594.
    • (2002) J. Appl. Phys. , vol.91 , pp. 4590-4594
    • Phillips, J.1
  • 11
    • 0034294106 scopus 로고    scopus 로고
    • Monte Carlo modeling of transient recharging processes in quantum-well infrared photodetectors
    • Ryzhii M., Ryzhii V. Monte Carlo modeling of transient recharging processes in quantum-well infrared photodetectors. IEEE Trans. Electron Devices. 47:2000;1935-1942.
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 1935-1942
    • Ryzhii, M.1    Ryzhii, V.2
  • 12
    • 0036610454 scopus 로고    scopus 로고
    • Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET
    • Knezevic L., Vasileska D.Z., Ferry D.K. Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET. IEEE Trans. Electron Devices. 49:2002;1019-1926.
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1019-1926
    • Knezevic, L.1    Vasileska, D.Z.2    Ferry, D.K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.