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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1243-1246

Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n-i-n photodetector structures

(3) Chen, Zhonghui a Kim, Eui Tae a Madhukar, Anupam a

a UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; PHOTOCURRENTS; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035998564 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1463721 Document Type: Conference Paper

Times cited : (9)

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